Infineon IPN70R N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223
- RS Stock No.:
- 222-4921
- Mfr. Part No.:
- IPN70R2K0P7SATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$1.587 | HK$4,761.00 |
| 6000 - 6000 | HK$1.555 | HK$4,665.00 |
| 9000 + | HK$1.524 | HK$4,572.00 |
*price indicative
- RS Stock No.:
- 222-4921
- Mfr. Part No.:
- IPN70R2K0P7SATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPN70R | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Power Dissipation Pd | 6W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPN70R | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Power Dissipation Pd 6W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
Infineon IPN70R Series MOSFET, 700V Maximum Drain Source Voltage, 3A Maximum Continuous Drain Current - IPN70R2K0P7SATMA1
This MOSFET is a high-voltage, N-channel enhancement device designed for surface-mounted power switching in circuits requiring elevated drain-source voltages. It operates across a wide temperature range and is intended for applications where controlled gate drive and power dissipation management are important.
Features and Benefits:
• 700 V drain-source rating enables high-voltage switching capability
• 3 A continuous drain current supports moderate current loads
• 2 Ω maximum RDS(on) reduces conduction losses under light loads
• 3.8 nC typical gate charge minimises switching energy
• 16 V maximum gate-source limit allows standard gate-drive levels
• 6 W maximum power dissipation aids thermal management in SOT-223
• 3 A continuous drain current supports moderate current loads
• 2 Ω maximum RDS(on) reduces conduction losses under light loads
• 3.8 nC typical gate charge minimises switching energy
• 16 V maximum gate-source limit allows standard gate-drive levels
• 6 W maximum power dissipation aids thermal management in SOT-223
Applications
• Suitable for power supplies requiring high-voltage switches
• Ideal for switch-mode regulators with moderate current demands
• Used for line-side switching in industrial control equipment
• Can be used for lighting drivers operating at high voltage
• Used with surface-mount assemblies where Compact power is needed
• Ideal for switch-mode regulators with moderate current demands
• Used for line-side switching in industrial control equipment
• Can be used for lighting drivers operating at high voltage
• Used with surface-mount assemblies where Compact power is needed
What ambient temperatures can it tolerate during operation?
It is specified to function down to −40 °C and up to 150 °C.
How does the package affect mounting and the thermal path?
The SOT-223 package is intended for surface mounting and provides a thermal path suitable for its 6 W dissipation rating.
What gate-drive considerations are required for safe operation?
Gate voltage must not exceed 16 V and should be controlled to achieve the desired enhancement conduction while respecting the gate charge of 3.8 nC.
How should designers account for conduction losses at rated current?
Use the maximum 2 Ω drain-source resistance to estimate worst-case conduction losses at continuous currents up to 3 A.
Related links
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