Infineon CoolMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin TO-252 IPD90N08S405ATMA1
- RS Stock No.:
- 222-4679
- Mfr. Part No.:
- IPD90N08S405ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
HK$75.70
FREE delivery for orders over HK$250.00
In Stock
- 12,395 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$15.14 | HK$75.70 |
| 10 - 95 | HK$14.88 | HK$74.40 |
| 100 - 245 | HK$14.60 | HK$73.00 |
| 250 - 495 | HK$14.34 | HK$71.70 |
| 500 + | HK$14.10 | HK$70.50 |
*price indicative
- RS Stock No.:
- 222-4679
- Mfr. Part No.:
- IPD90N08S405ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 144W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 144W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Related links
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