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Infineon OptiMOS-TM5 Type N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

RS Stock No.:: 222-4620
Mfr. Part No.:: BSC072N08NS5ATMA1
Manufacturer:: Infineon

Infineon OptiMOS-TM5 Type N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

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Subtotal (1 pack of 10 units)*

HK$80.47

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Units	Per unit	Per Pack*
10 - 10	HK$8.047	HK$80.47
20 - 90	HK$7.91	HK$79.10
100 - 240	HK$7.76	HK$77.60
250 - 490	HK$7.62	HK$76.20
500 +	HK$7.49	HK$74.90

*price indicative

RS Stock No.:: 222-4620
Mfr. Part No.:: BSC072N08NS5ATMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TDSON
	Series	OptiMOS-TM5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	69W
	Maximum Operating Temperature	150°C
	Length	5.35mm
	Height	1.2mm
	Width	6.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 80V
	Package Type TDSON
	Series OptiMOS-TM5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 69W
	Maximum Operating Temperature 150°C
	Length 5.35mm
	Height 1.2mm
	Width 6.1 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC072N08NS5ATMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Infineon OptiMOS-TM5 Type N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

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