DiodesZetex 2N7002 Type N-Channel MOSFET, 292 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002EQ-7-F
- RS Stock No.:
- 222-2694
- Mfr. Part No.:
- 2N7002EQ-7-F
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
HK$78.90
FREE delivery for orders over HK$250.00
In Stock
- 3,450 unit(s) ready to ship from another location
- Plus 1,850 unit(s) shipping from 13 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | HK$1.578 | HK$78.90 |
| 100 - 200 | HK$1.548 | HK$77.40 |
| 250 - 450 | HK$1.522 | HK$76.10 |
| 500 - 950 | HK$1.496 | HK$74.80 |
| 1000 + | HK$1.466 | HK$73.30 |
*price indicative
- RS Stock No.:
- 222-2694
- Mfr. Part No.:
- 2N7002EQ-7-F
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 292mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.7W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 292mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.7W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1.1mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Related links
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