onsemi NTMFS006N Type N-Channel MOSFET, 93 A, 120 V Enhancement, 5-Pin DFN NTMFS006N12MCT1G
- RS Stock No.:
- 221-6722
- Mfr. Part No.:
- NTMFS006N12MCT1G
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6722
- Mfr. Part No.:
- NTMFS006N12MCT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | NTMFS006N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.3mm | |
| Height | 6.3mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series NTMFS006N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 5.3mm | ||
Height 6.3mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MV MOSFET is produced using advanced power trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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