onsemi NTBL050N65S Type N-Channel MOSFET, 49 A, 650 V Enhancement, 8-Pin H-PSOF NTBL050N65S3H
- RS Stock No.:
- 221-6706
- Mfr. Part No.:
- NTBL050N65S3H
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$129.80
FREE delivery for orders over HK$250.00
Supply shortage
- 1,990 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$64.90 | HK$129.80 |
| 10 - 98 | HK$63.75 | HK$127.50 |
| 100 - 248 | HK$62.60 | HK$125.20 |
| 250 - 498 | HK$61.45 | HK$122.90 |
| 500 + | HK$60.40 | HK$120.80 |
*price indicative
- RS Stock No.:
- 221-6706
- Mfr. Part No.:
- NTBL050N65S3H
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H-PSOF | |
| Series | NTBL050N65S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 305W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 11.47mm | |
| Standards/Approvals | No | |
| Width | 2.4 mm | |
| Length | 10.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H-PSOF | ||
Series NTBL050N65S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 305W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 11.47mm | ||
Standards/Approvals No | ||
Width 2.4 mm | ||
Length 10.8mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 909 pF
100% avalanche tested
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