Infineon CoolMOS P7 N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1
- RS Stock No.:
- 220-7437
- Mfr. Part No.:
- IPN60R600P7SATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
HK$129.20
FREE delivery for orders over HK$250.00
In Stock
- 1,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | HK$6.46 | HK$129.20 |
| 760 - 1480 | HK$6.345 | HK$126.90 |
| 1500 + | HK$6.235 | HK$124.70 |
*price indicative
- RS Stock No.:
- 220-7437
- Mfr. Part No.:
- IPN60R600P7SATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-223 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 7W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Operating Temperature | +150°C | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-223 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 7W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Operating Temperature +150°C | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 3.7mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET & Diode, 650V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - IPN60R600P7SATMA1
This MOSFET & diode module combines a high-voltage N-channel switching transistor with an integrated diode for use in power conversion and switching applications. It is designed for surface-mount assembly in a SOT-223 package and operates across a wide ambient range, supporting demanding thermal environments and continuous current delivery for industrial power stages and converters.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 16A continuous drain current supports sustained load operation
• 600mΩ Rds(on) minimises conduction losses during switching
• 9nC typical gate charge reduces drive energy requirements
• 7W maximum power dissipation allows significant thermal load handling
• 0.9V forward diode voltage lowers conduction drop in freewheeling use
• 16A continuous drain current supports sustained load operation
• 600mΩ Rds(on) minimises conduction losses during switching
• 9nC typical gate charge reduces drive energy requirements
• 7W maximum power dissipation allows significant thermal load handling
• 0.9V forward diode voltage lowers conduction drop in freewheeling use
Applications
• Suitable for high-voltage offline power supplies
• Ideal for switch-mode power converters requiring surface mount
• Used for synchronous rectification in mixed-topology designs
• Can be used for industrial motor drive intermediate stages
• Suitable for DC-DC converters with elevated operating temperatures
• Ideal for switch-mode power converters requiring surface mount
• Used for synchronous rectification in mixed-topology designs
• Can be used for industrial motor drive intermediate stages
• Suitable for DC-DC converters with elevated operating temperatures
What gate voltage range is safe for driving the device?
The device accepts up to 20V between gate and source for normal operation.
What temperature extremes can it withstand during use?
It is rated to operate from −40°C up to +150°C ambient.
How many pins does the package present for PCB layout?
The component is supplied with three electrical connections suitable for SOT-223 footprints.
What is the channel type and conduction mode of the transistor?
It uses an N-type channel and operates in enhancement mode.
What mounting style is required for assembly onto a board?
It is intended for surface-mount installation in a SOT-223 package.
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R900P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R4K5P7ATMA1