Infineon CoolMOS P7 N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON
- RS Stock No.:
- 220-7432
- Mfr. Part No.:
- IPL60R105P7AUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 3000 units)*
HK$56,028.00
FREE delivery for orders over HK$250.00
- Shipping from 02 July 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$18.676 | HK$56,028.00 |
| 6000 - 9000 | HK$18.302 | HK$54,906.00 |
| 12000 + | HK$17.936 | HK$53,808.00 |
*price indicative
- RS Stock No.:
- 220-7432
- Mfr. Part No.:
- IPL60R105P7AUMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 137W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 8.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 137W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 8.1mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET & Diode, 650V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - IPL60R105P7AUMA1
Features and Benefits:
• 100A continuous drain current supports heavy load handling
• 105mΩ maximum Rds(on) reduces conduction losses in power stages
• 137W maximum power dissipation permits elevated thermal loading
• 45nC typical gate charge at Vgs 20V balances drive requirements
• VSON 5-pin package supports Compact surface-mount integration
Applications
• Ideal for offline power supplies requiring a high-voltage MOSFET diode
• Used for synchronous rectification in high-power converter designs
• Can be used for industrial motor-drive front-end stages
• Suitable for DC-DC converters handling substantial continuous current
What gate-drive voltage range is permitted for safe operation?
What thermal extremes can it withstand during operation?
How does the package influence mounting and layout?
What is the typical switching charge designers must budget for in gate drivers?
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1
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- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
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- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-220
