Infineon C7 GOLD N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1
- RS Stock No.:
- 220-7417
- Mfr. Part No.:
- IPDD60R080G7XTMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* | Saving |
|---|---|---|---|
| 1700 - 6800 | HK$31.262 | HK$53,145.40 | - |
| 8500 + | HK$30.637 | HK$52,082.90 | HK$5,312.50 |
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- RS Stock No.:
- 220-7417
- Mfr. Part No.:
- IPDD60R080G7XTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 83A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HDSOP | |
| Series | C7 GOLD | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 174W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 800mV | |
| Width | 2.35mm | |
| Standards/Approvals | No | |
| Height | 21.11mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 83A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HDSOP | ||
Series C7 GOLD | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 174W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 800mV | ||
Width 2.35mm | ||
Standards/Approvals No | ||
Height 21.11mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
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