Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2
- RS Stock No.:
- 220-7412
- Mfr. Part No.:
- IPD70P04P4L08ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
HK$82.90
FREE delivery for orders over HK$250.00
In Stock
- 2,080 unit(s) ready to ship from another location
- Plus 2,500 unit(s) shipping from 02 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | HK$8.29 | HK$82.90 |
| 630 - 1240 | HK$8.08 | HK$80.80 |
| 1250 + | HK$7.96 | HK$79.60 |
*price indicative
- RS Stock No.:
- 220-7412
- Mfr. Part No.:
- IPD70P04P4L08ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 75W | |
| Forward Voltage Vf | -1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 75W | ||
Forward Voltage Vf -1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.
P-channel - Logic Level - Enhancement mode
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
Related links
- Infineon OptiMOS Type P-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type P-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type P-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- Infineon OptiMOS Type N-Channel MOSFET & Diode 120 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET & Diode 120 V Enhancement, 3-Pin TO-263 IPB70N12S311ATMA1
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3