Infineon CoolMOS C7 N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252 IPD65R190C7ATMA1
- RS Stock No.:
- 220-7409
- Mfr. Part No.:
- IPD65R190C7ATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 620 | HK$27.62 | HK$138.10 | - |
| 625 - 1245 | HK$26.90 | HK$134.50 | HK$450.00 |
| 1250 + | HK$26.50 | HK$132.50 | HK$1,400.00 |
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- RS Stock No.:
- 220-7409
- Mfr. Part No.:
- IPD65R190C7ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS C7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 72mW | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 900mV | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS C7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 72mW | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 900mV | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
12 years manufacturing experience in super junction technology
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding Cool MOS™ quality
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