Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1
- RS Stock No.:
- 219-5991
- Mfr. Part No.:
- IPA95R1K2P7XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
HK$86.60
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In Stock
- 40 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$8.66 | HK$86.60 |
| 20 - 90 | HK$8.50 | HK$85.00 |
| 100 - 240 | HK$8.34 | HK$83.40 |
| 250 - 490 | HK$8.20 | HK$82.00 |
| 500 + | HK$8.05 | HK$80.50 |
*price indicative
- RS Stock No.:
- 219-5991
- Mfr. Part No.:
- IPA95R1K2P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 27W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 27W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 950V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - IPA95R1K2P7XKSA1
This MOSFET is a high-voltage enhancement N‑channel transistor intended for power switching applications where sustained thermal and electrical performance is required. It operates across a wide ambient temperature range and is supplied in a through-hole TO‑220 package suited to mounted installations, delivering a balance of voltage handling, current capability and gate‑drive tolerance for use in power conversion and switching circuits.
Features and Benefits:
• 950 V rating enables high‑voltage switching applications
• 6 A continuous drain current supports moderate power loads
• 120 mΩ Rds(on) delivers low conduction losses during switching
• 27 W power dissipation allows sustained thermal loading
• 0.9 V forward voltage minimises Vf‑related conduction drop
• 30 V gate‑source rating permits common gate‑drive voltages
• 6 A continuous drain current supports moderate power loads
• 120 mΩ Rds(on) delivers low conduction losses during switching
• 27 W power dissipation allows sustained thermal loading
• 0.9 V forward voltage minimises Vf‑related conduction drop
• 30 V gate‑source rating permits common gate‑drive voltages
Applications
• Suitable for high‑voltage power supplies and converters
• Ideal for offline switch‑mode power supply primary side
• Used for industrial power switching and motor drivers
• Can be used for HV snubber and clamping circuits
• Used with power assemblies requiring TO‑220 mounting
• Ideal for offline switch‑mode power supply primary side
• Used for industrial power switching and motor drivers
• Can be used for HV snubber and clamping circuits
• Used with power assemblies requiring TO‑220 mounting
What ambient temperature range can it tolerate?
It is specified to function between −55 °C and +150 °C.
How many pins and what mounting approach does it use?
It has three pins and is designed for through‑hole mounting in a TO‑220 package.
What channel mode and type does it employ?
It is an enhancement‑mode N‑channel device.
What is the maximum drain‑source voltage and its implication?
The maximum drain‑source voltage is 950 V, permitting use in high‑voltage circuits.
What electrical limits govern gate input?
The gate‑source voltage must not exceed 30 V.
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220