Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 218-3050
- Mfr. Part No.:
- IPD60R280P7SAUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
HK$10,602.50
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 18 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | HK$4.241 | HK$10,602.50 |
| 12500 + | HK$4.156 | HK$10,390.00 |
*price indicative
- RS Stock No.:
- 218-3050
- Mfr. Part No.:
- IPD60R280P7SAUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - IPD60R280P7SAUMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications where robust voltage handling and elevated operating temperatures are required. It functions as an enhancement-mode transistor suitable for switching and power conversion tasks, offering controlled gate-driven conduction and support for continuous drain currents typical in industrial and power-electronics environments.
Features and Benefits:
• 600 V maximum drain-source voltage enables high-voltage switching
• 12 A continuous drain current supports significant load currents
• 280 mΩ maximum RDS(on) reduces conduction losses under load
• 53 W maximum power dissipation maintains thermal margin in operation
• 18 nC typical gate charge at VGS permits fast switching transitions
• −40 °C to 150 °C operating range allows high-temperature deployment
• 12 A continuous drain current supports significant load currents
• 280 mΩ maximum RDS(on) reduces conduction losses under load
• 53 W maximum power dissipation maintains thermal margin in operation
• 18 nC typical gate charge at VGS permits fast switching transitions
• −40 °C to 150 °C operating range allows high-temperature deployment
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with motor drives requiring 600 V rated devices
• Can be used for industrial power-switching modules
• Suitable for Compact surface-mount power assemblies
• Ideal for switch-mode power supply primary switches
• Used with motor drives requiring 600 V rated devices
• Can be used for industrial power-switching modules
• Suitable for Compact surface-mount power assemblies
What gate voltage limits must be observed for safe operation?
The device must not exceed a gate-source voltage of 20 V to avoid gate overstress.
How does the package format affect mounting and the thermal path?
The TO-252 surface-mount package provides a Compact footprint and a direct thermal path through the tab for PCB heat-sinking arrangements.
What type of conduction mode does it employ and what does that imply?
It operates in enhancement mode as an N-channel device, so it requires a positive gate drive relative to the source to turn on.
What is the typical gate-charge behaviour relevant for drive design?
The typical gate charge of 18 nC at VGS indicates the gate driver must supply that charge per switching event, influencing driver sizing and switching losses.
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R280P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R360P7ATMA1