Infineon OptiMOS-T2 N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2
- RS Stock No.:
- 218-3045
- Mfr. Part No.:
- IPD50N06S4L12ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (20 units, in packs of 20)*
HK$153.10
FREE delivery for orders over HK$250.00
In Stock
- 5,540 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 620 | HK$7.655 | HK$153.10 |
| 640 - 1240 | HK$7.465 | HK$149.30 |
| 1260 + | HK$7.35 | HK$147.00 |
*price indicative
- RS Stock No.:
- 218-3045
- Mfr. Part No.:
- IPD50N06S4L12ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS-T2 Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L12ATMA2
This MOSFET is a 60V N-channel enhancement device designed for high-current switching in demanding environments. It operates across a wide ambient temperature span and is intended for surface-mounted assemblies where efficient conduction and Compact packaging are required.
Features and Benefits:
• Low on-resistance of 12mΩ reduces conduction losses
• Maximum continuous drain current of 50A supports heavy loads
• 50W power dissipation capability manages thermal stress
• Gate charge of 30nC enables quicker switching transitions
• 16V gate rating allows robust gate-drive margins
• AEC-Q101 qualification ensures suitability for automotive use
• Maximum continuous drain current of 50A supports heavy loads
• 50W power dissipation capability manages thermal stress
• Gate charge of 30nC enables quicker switching transitions
• 16V gate rating allows robust gate-drive margins
• AEC-Q101 qualification ensures suitability for automotive use
Applications
• Suitable for DC-DC converters in automotive electronics
• Ideal for power switching in traction auxiliary systems
• Used for high-current motor driver stages
• Can be used for battery management and protection circuits
• Appropriate for surface-mount power modules on Compact boards
• Ideal for power switching in traction auxiliary systems
• Used for high-current motor driver stages
• Can be used for battery management and protection circuits
• Appropriate for surface-mount power modules on Compact boards
What are the device’s voltage limits for drain and gate?
The drain-to-source withstands up to 60V while the gate-to-source is rated to 16V.
How does the device handle extreme ambient temperatures?
It is specified to operate down to -55°C and up to 175°C for varied thermal environments.
What package and mounting form does it use for PCB assembly?
It is supplied in a TO-252 package designed for surface mounting.
What channel type and mode determine its conduction behaviour?
It uses an N-channel structure configured in enhancement mode for controlled switching.
What physical footprint considerations affect layout thermal design?
The package dimensions are Compact with a height of 2.41mm, length of 6.73mm and width of 6.22mm to aid dense board placement.
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD100N06S403ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2