Infineon OptiMOS-T2 N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S4H1ATMA2
- RS Stock No.:
- 218-3032
- Mfr. Part No.:
- IPB120N06S4H1ATMA2
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* | Saving |
|---|---|---|---|
| 1000 - 1000 | HK$17.29 | HK$17,290.00 | - |
| 2000 + | HK$16.774 | HK$16,774.00 | HK$1,032.00 |
*price indicative
- RS Stock No.:
- 218-3032
- Mfr. Part No.:
- IPB120N06S4H1ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.
N-channel - Enhancement mode
175°C operating temperature
100% Avalanche tested
Related links
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