Infineon OptiMOS N-Channel MOSFET, 119 A, 40 V N, 8-Pin TDSON BSC026N04LSATMA1
- RS Stock No.:
- 218-2975
- Mfr. Part No.:
- BSC026N04LSATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 1245 | HK$7.447 | HK$111.71 |
| 1260 - 2490 | HK$7.247 | HK$108.71 |
| 2505 + | HK$7.147 | HK$107.21 |
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- RS Stock No.:
- 218-2975
- Mfr. Part No.:
- BSC026N04LSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 63W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Width | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 63W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Width 6.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 119A Maximum Continuous Drain Current - BSC026N04LSATMA1
This MOSFET is a high-current N-channel transistor designed for power switching in surface-mounted systems, providing controlled conduction for DC-DC conversion and similar power-management tasks within wide operating conditions.
Features and Benefits:
• Maximum drain-source voltage supports 40 V system operation
• Very low on-resistance reduces conduction losses at 2.6 mΩ
• Continuous drain current rating enables 119 A sustained load handling
• Typical gate charge of 45 nC minimises switching energy and delay
• Power dissipation capability allows 63 W thermal handling during operation
• Gate-source withstand up to 20 V for robust drive margin
• Very low on-resistance reduces conduction losses at 2.6 mΩ
• Continuous drain current rating enables 119 A sustained load handling
• Typical gate charge of 45 nC minimises switching energy and delay
• Power dissipation capability allows 63 W thermal handling during operation
• Gate-source withstand up to 20 V for robust drive margin
Applications
• Suitable for high-current DC-DC converters in power supplies
• Ideal for switching stages in automotive power modules
• Used for motor-driver half-bridges requiring low conduction loss
• Can be used for high-efficiency synchronous rectification
• Suitable for Compact surface-mount power assemblies
• Ideal for switching stages in automotive power modules
• Used for motor-driver half-bridges requiring low conduction loss
• Can be used for high-efficiency synchronous rectification
• Suitable for Compact surface-mount power assemblies
What temperature range can it reliably operate within?
It is specified to function between −55 °C and 150 °C for extended thermal margins.
What package and mounting method are used for Compact designs?
It is supplied in an 8-pin TDSON package intended for surface mounting.
How does its forward voltage affect power-stage design?
The forward voltage of 1 V should be considered when calculating conduction losses and selection of gate-drive levels.
What channel and conduction mode does the device use?
It employs an N-type channel operating in enhancement mode for standard MOSFET switching behaviour.
Related links
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