Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V, 7-Pin TO-263
- RS Stock No.:
- 217-2641
- Mfr. Part No.:
- IRLS4030TRL7PP
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 800 units)*
HK$30,015.20
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | HK$37.519 | HK$30,015.20 |
| 1600 - 2400 | HK$36.769 | HK$29,415.20 |
| 3200 + | HK$36.033 | HK$28,826.40 |
*price indicative
- RS Stock No.:
- 217-2641
- Mfr. Part No.:
- IRLS4030TRL7PP
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Maximum Power Dissipation Pd | 370W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.35mm | |
| Height | 15.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Maximum Power Dissipation Pd 370W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.35mm | ||
Height 15.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package.
Optimized for Logic Level Drive
Very Low RDS(ON) at 4.5V VGS
Superior R*Q at 4.5V VGS I
improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Related links
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