Infineon HEXFET Type N-Channel MOSFET, 140 A, 30 V TO-263

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Subtotal (1 reel of 800 units)*

HK$7,132.80

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  • Shipping from 20 December 2027
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Units
Per unit
Per Reel*
800 - 800HK$8.916HK$7,132.80
1600 - 2400HK$8.648HK$6,918.40
3200 +HK$8.389HK$6,711.20

*price indicative

RS Stock No.:
217-2637
Mfr. Part No.:
IRL3803STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

140A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

9mΩ

Typical Gate Charge Qg @ Vgs

140nC

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.83 mm

Height

15.88mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 30V Single N-Channel IR MOSFET in a D2-Pak package.

Planar cell structure for wide Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

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