Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-252
- RS Stock No.:
- 217-2628
- Mfr. Part No.:
- IRFS3207TRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 800 units)*
HK$10,306.40
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | HK$12.883 | HK$10,306.40 |
| 1600 - 2400 | HK$12.625 | HK$10,100.00 |
| 3200 + | HK$12.373 | HK$9,898.40 |
*price indicative
- RS Stock No.:
- 217-2628
- Mfr. Part No.:
- IRFS3207TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Typical Gate Charge Qg @ Vgs | 260nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Height | 9.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Typical Gate Charge Qg @ Vgs 260nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Height 9.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.
Improved Gate Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Related links
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