Infineon HEXFET Type N-Channel MOSFET, 44 A, 30 V Enhancement, 8-Pin PQFN IRFH8334TRPBF
- RS Stock No.:
- 217-2615
- Mfr. Part No.:
- IRFH8334TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
HK$149.90
FREE delivery for orders over HK$250.00
In Stock
- 3,150 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 950 | HK$2.998 | HK$149.90 |
| 1000 - 1950 | HK$2.924 | HK$146.20 |
| 2000 + | HK$2.88 | HK$144.00 |
*price indicative
- RS Stock No.:
- 217-2615
- Mfr. Part No.:
- IRFH8334TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.17mm | |
| Standards/Approvals | RoHS | |
| Width | 4.98 mm | |
| Length | 6.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.17mm | ||
Standards/Approvals RoHS | ||
Width 4.98 mm | ||
Length 6.02mm | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 5V gate-drive voltage (called Logic level)
Industry standard surface-mount power package
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