Infineon CoolMOS P7 N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 217-2558
- Mfr. Part No.:
- IPP60R080P7XKSA1
- Manufacturer:
- Infineon
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HK$1,101.10
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In Stock
- 100 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$22.022 | HK$1,101.10 |
| 100 - 150 | HK$21.688 | HK$1,084.40 |
| 200 + | HK$21.208 | HK$1,060.40 |
*price indicative
- RS Stock No.:
- 217-2558
- Mfr. Part No.:
- IPP60R080P7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 129W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.95mm | |
| Length | 10.36mm | |
| Width | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 129W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 29.95mm | ||
Length 10.36mm | ||
Width 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 37A Maximum Continuous Drain Current - IPP60R080P7XKSA1
This MOSFET is a high-voltage, N-channel switching transistor designed for power applications requiring through-hole mounting and enhanced-channel operation. It is intended for circuits that need substantial continuous drain current and elevated voltage handling across a wide operating temperature range.
Features and Benefits:
• 600V drain capability enables high-voltage switching applications
• 37A continuous drain current supports high-power load handling
• 80mΩ Rds(on) reduces conduction losses for improved efficiency
• 129W maximum power dissipation allows sustained power handling
• 51nC typical gate charge supports predictable switching behaviour
• 20V gate rating tolerates robust gate-drive voltages
• 37A continuous drain current supports high-power load handling
• 80mΩ Rds(on) reduces conduction losses for improved efficiency
• 129W maximum power dissipation allows sustained power handling
• 51nC typical gate charge supports predictable switching behaviour
• 20V gate rating tolerates robust gate-drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for motor-drive stages requiring high current
• Used with through-hole PCBs in industrial control systems
• Can be used for switch-mode power conversion designs
• Suitable for needing wide temperature endurance
• Ideal for motor-drive stages requiring high current
• Used with through-hole PCBs in industrial control systems
• Can be used for switch-mode power conversion designs
• Suitable for needing wide temperature endurance
What thermal extremes can this device operate within?
It is rated to operate from -55°C up to 150°C.
What package and mounting method does it use?
The device is supplied in a TO-220 package for through-hole mounting.
What is the device channel type and operating mode?
It uses an N-type channel in enhancement mode for conventional high-side or low-side switching.
What is the device forward voltage and how does it affect circuits?
The forward voltage is 0.9V, which affects the conduction drop during forward conduction in circuit designs.
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1
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- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247 IPZA60R080P7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220