Infineon IPN N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1
- RS Stock No.:
- 217-2543
- Mfr. Part No.:
- IPN60R360P7SATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | HK$8.20 | HK$164.00 |
| 760 - 1480 | HK$7.995 | HK$159.90 |
| 1500 + | HK$7.88 | HK$157.60 |
*price indicative
- RS Stock No.:
- 217-2543
- Mfr. Part No.:
- IPN60R360P7SATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 111W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 8.8mm | |
| Width | 8.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 111W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 8.8mm | ||
Width 8.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon IPN Series MOSFET, 600V Maximum Drain Source Voltage, 111W Maximum Power Dissipation - IPN60R360P7SATMA1
This MOSFET is a high-voltage N-channel switch intended for surface-mounted power applications, offering enhancement‑mode operation for controlled conduction in electronic circuits. It is designed to operate across an extended ambient range and interfaces via three pins in a Compact SOT-223 package suited to board‑level assembly.
Features and Benefits:
• 600 V drain tolerance enables operation in high-voltage systems
• 9 A continuous drain current supports moderate power loads
• 360 mΩ Rds(on) minimises conduction losses at rated conditions
• 111 W power dissipation allows sustained thermal handling
• 36 nC typical gate charge facilitates predictable switching behaviour
• 9 A continuous drain current supports moderate power loads
• 360 mΩ Rds(on) minimises conduction losses at rated conditions
• 111 W power dissipation allows sustained thermal handling
• 36 nC typical gate charge facilitates predictable switching behaviour
Applications
• Suitable for high-voltage power switching designs
• Ideal for DC-DC converter output stages
• Used with power supplies requiring surface-mount components
• Can be used for motor driver switches in control circuits
• Suitable for line‑level power management in industrial equipment
• Ideal for DC-DC converter output stages
• Used with power supplies requiring surface-mount components
• Can be used for motor driver switches in control circuits
• Suitable for line‑level power management in industrial equipment
What gate voltage limits must be observed during operation?
The gate must not exceed a Peak of 20 V relative to source to avoid overstress.
What thermal range can the device withstand in service?
It is specified for operation from −40 °C to 150 °C to cover low-temperature start‑up and elevated operating conditions.
How many electrical connections does it provide for PCB mounting?
It provides three electrical pins and is supplied in an SOT-223 surface‑mount format.
What is the typical forward drop when conducting in the forward diode path?
The forward voltage is specified at 0.9 V under the datasheet test conditions.
Related links
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