Infineon CoolMOS Type N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-263 IPB70N10S312ATMA1
- RS Stock No.:
- 217-2508
- Mfr. Part No.:
- IPB70N10S312ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$187.40
FREE delivery for orders over HK$250.00
In Stock
- 620 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | HK$18.74 | HK$187.40 |
| 250 - 490 | HK$18.28 | HK$182.80 |
| 500 + | HK$18.00 | HK$180.00 |
*price indicative
- RS Stock No.:
- 217-2508
- Mfr. Part No.:
- IPB70N10S312ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 129W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.31mm | |
| Width | 9.45 mm | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 129W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 10.31mm | ||
Width 9.45 mm | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon 100V, N-Ch, 11.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100% Avalanche tested
Related links
- Infineon CoolMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1
- Infineon CoolMOS Type N-Channel MOSFET & Diode 900 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263