Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1

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HK$93.70

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Units
Per unit
Per Pack*
2 - 8HK$46.85HK$93.70
10 - 98HK$46.00HK$92.00
100 - 248HK$45.20HK$90.40
250 - 498HK$44.35HK$88.70
500 +HK$43.55HK$87.10

*price indicative

Packaging Options:
RS Stock No.:
222-4656
Mfr. Part No.:
IPB65R110CFDAATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

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