Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1

The image is for reference only, please refer to product details and specifications

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

HK$233.80

Add to Basket
Select or type quantity
In Stock
  • 145 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
5 - 245HK$46.76HK$233.80
250 - 495HK$45.58HK$227.90
500 +HK$44.88HK$224.40

*price indicative

Packaging Options:
RS Stock No.:
214-9009
Mfr. Part No.:
IPB024N10N5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 5

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested

Qualified according to JEDEC for target applications

Related links