DiodesZetex DMT4008LFDF Type N-Channel MOSFET, 11.8 A, 40 V Enhancement, 6-Pin UDFN
- RS Stock No.:
- 213-9207
- Mfr. Part No.:
- DMT4008LFDF-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 213-9207
- Mfr. Part No.:
- DMT4008LFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | UDFN | |
| Series | DMT4008LFDF | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Width | 2 mm | |
| Height | 0.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type UDFN | ||
Series DMT4008LFDF | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Width 2 mm | ||
Height 0.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The DiodesZetex DMT4008LFDF series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
Low gate threshold voltage
Fast switching speed
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