Vishay SiDR680ADP N-Channel MOSFET, 137 A, 80 V Enhancement, 8-Pin SO-8 SIDR680ADP-T1-RE3

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RS Stock No.:
204-7257
Mfr. Part No.:
SIDR680ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiDR680ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.88mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55nC

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.9mm

Height

510μm

Width

4.9mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low RDS - Qg figure-of-merit (FOM) and is tuned for the lowest RDS - Qoss FOM.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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