Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 204-7245
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
HK$64,518.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 05 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$21.506 | HK$64,518.00 |
| 6000 - 9000 | HK$21.076 | HK$63,228.00 |
| 12000 + | HK$20.654 | HK$61,962.00 |
*price indicative
- RS Stock No.:
- 204-7245
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Height | 4.06mm | |
| Standards/Approvals | RoHS | |
| Length | 14.61mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Height 4.06mm | ||
Standards/Approvals RoHS | ||
Length 14.61mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 25A Continuous Drain Current - SIHB125N60EF-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in industrial electronics. It is intended for surface-mount use on power assemblies where robust voltage handling and elevated temperature tolerance are required, supporting applications that switch high voltages and substantial currents in automation and electrical systems.
Features and Benefits:
• 600V drain rating enables high-voltage switching capability • 25A continuous drain current supports substantial load currents • 125mΩ Rds(on) reduces conduction losses under load • 31nC typical gate charge minimises drive energy requirements • 179W power dissipation allows sustained power handling • 150°C maximum operating temperature supports high-temperature environments
Applications
• Suitable for high-voltage inverter stages in industrial drives • Ideal for power supplies requiring high breakdown voltage • Used with motor controllers handling tens of amperes • Can be used for relay replacement in solid-state switching • Used for power conversion in automation equipment
What gate voltage range is safe for switching the device?
The device accepts gate voltages up to 30V, specifying the maximum permissible gate-to-source potential for reliable operation.
How does package choice affect thermal performance?
The TO-263 package offers a large thermal pad and leads for heat conduction, aiding heat transfer to PCB copper and heatsinks to support the rated power dissipation.
What are the environmental limits for operation?
The component is specified to operate down to -55°C and up to 150°C, defining the allowable ambient and junction extremes for design margins.
How many pins are available for PCB layout considerations?
The part uses three pins, which determines footprint and connection arrangements for drain, source and gate on the PCB.
Related links
- Vishay SiHB125N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R090CFD7ATMA1
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SiHFBC30AS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263