onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5737
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 450 units)*
HK$72,524.25
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 15 July 2027
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Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 450 | HK$161.165 | HK$72,524.25 |
| 900 - 1350 | HK$157.662 | HK$70,947.90 |
| 1800 + | HK$154.158 | HK$69,371.10 |
*price indicative
- RS Stock No.:
- 202-5737
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Operating Temperature | 170°C | |
| Length | 15.8mm | |
| Width | 5.2mm | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Operating Temperature 170°C | ||
Length 15.8mm | ||
Width 5.2mm | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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