SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

RS Stock No.:: 192-3509
Mfr. Part No.:: C3M0280090J
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

2750 In stock for delivery within 3 working days

Price Each (In a Pack of 2)

HK$53.455

Units	Per unit	Per Pack*
2 - 12	HK$53.455	HK$106.91
14 +	HK$52.51	HK$105.02

*price indicative

RS Stock No.:: 192-3509
Mfr. Part No.:: C3M0280090J
Manufacturer:: Wolfspeed

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	900 V
Package Type	TO-263-7
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	50 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, 18 V
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Length	10.23mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	9.5 nC @ 4/15V
Width	9.12mm
Minimum Operating Temperature	-55 °C
Height	4.57mm