onsemi NTMYS1D2N04CL Type N-Channel MOSFET, 258 A, 40 V Enhancement, 8-Pin LFPAK
- RS Stock No.:
- 189-0262
- Mfr. Part No.:
- NTMYS1D2N04CLTWG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$22,812.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 13 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$7.604 | HK$22,812.00 |
| 6000 - 9000 | HK$7.452 | HK$22,356.00 |
| 12000 + | HK$7.303 | HK$21,909.00 |
*price indicative
- RS Stock No.:
- 189-0262
- Mfr. Part No.:
- NTMYS1D2N04CLTWG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 258A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMYS1D2N04CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 109nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 134W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 258A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMYS1D2N04CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 109nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 134W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Related links
- onsemi NTMYS1D2N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK NTMYS1D2N04CLTWG
- onsemi NTMJS1D4N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NTMJS1D0N04C Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NVMJS1D3N04C Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NTMJS1D5N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NVMJS1D5N04CL Type N-Channel MOSFET 40 V Enhancement, 8-Pin LFPAK
- onsemi NVMJS2D5N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK
- onsemi NTMJS1D6N06CL Type N-Channel MOSFET 60 V Enhancement, 8-Pin LFPAK