Vishay SiSS61DN Type P-Channel MOSFET, 111.9 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS61DN-T1-GE3

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Subtotal (1 pack of 10 units)*

HK$75.00

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Units
Per unit
Per Pack*
10 - 740HK$7.50HK$75.00
750 - 1490HK$7.30HK$73.00
1500 +HK$7.20HK$72.00

*price indicative

Packaging Options:
RS Stock No.:
188-5117
Distrelec Article No.:
304-32-537
Mfr. Part No.:
SiSS61DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

111.9A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK 1212

Series

SiSS61DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.8W

Typical Gate Charge Qg @ Vgs

154nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Length

3.3mm

Height

0.78mm

Standards/Approvals

No

Automotive Standard

No

P-Channel 20 V (D-S) MOSFET.

TrenchFET® Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

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