Vishay SiSH101DN Type P-Channel MOSFET, 35 A, 30 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 188-4892
- Mfr. Part No.:
- SiSH101DN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$8,535.00
Add 3000 units to get free delivery
Temporarily out of stock
- Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$2.845 | HK$8,535.00 |
| 6000 - 27000 | HK$2.76 | HK$8,280.00 |
| 30000 + | HK$2.677 | HK$8,031.00 |
*price indicative
- RS Stock No.:
- 188-4892
- Mfr. Part No.:
- SiSH101DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSH101DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Height | 0.93mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSH101DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Height 0.93mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® power MOSFET
Related links
- Vishay SiSH101DN Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSH101DN-T1-GE3
- Vishay SiSS05DN Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS73DN Type P-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Si7121DN Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS61DN Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212