Vishay SiRA99DP Type P-Channel MOSFET, 195 A, 30 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 188-4884
- Mfr. Part No.:
- SIRA99DP-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$37,671.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | HK$12.557 | HK$37,671.00 |
| 15000 + | HK$12.306 | HK$36,918.00 |
*price indicative
- RS Stock No.:
- 188-4884
- Mfr. Part No.:
- SIRA99DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiRA99DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 172.5nC | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiRA99DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 172.5nC | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Length 5.99mm | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Very low RDS(on) minimizes voltage drop and reduces conduction loss
Eliminates the need for charge pump
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