Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3
- RS Stock No.:
- 180-7909
- Mfr. Part No.:
- SIS412DN-T1-GE3
- Manufacturer:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | HK$4.97 | HK$99.40 |
| 760 - 1480 | HK$4.845 | HK$96.90 |
| 1500 + | HK$4.77 | HK$95.40 |
*price indicative
- RS Stock No.:
- 180-7909
- Mfr. Part No.:
- SIS412DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 15.6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 3.61mm | |
| Length | 3.61mm | |
| Height | 0.79mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 15.6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 3.61mm | ||
Length 3.61mm | ||
Height 0.79mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIS412DN-T1-GE3
This MOSFET is a surface‑mounted N‑channel transistor designed for power switching in compact electronic systems. It operates at a maximum drain-source voltage of 30V and supports sustained drain currents suitable for medium‑power applications. The component is intended for board‑level mounting in designs where low conduction losses and moderate power handling are required, functioning reliably across a broad temperature span.
Features and Benefits:
• Low on‑resistance of 0.03 Ω for reduced conduction losses
• Maximum continuous drain current 12A for higher load capability
• Typical gate charge Qg 3.8 nC enabling faster switching transitions
• Power dissipation rating 15.6W for sustained thermal performance
• Gate-source voltage tolerance ±20V for drive flexibility
• Operating range from -55 to 150 °C for wide‑temperature deployment
• Maximum continuous drain current 12A for higher load capability
• Typical gate charge Qg 3.8 nC enabling faster switching transitions
• Power dissipation rating 15.6W for sustained thermal performance
• Gate-source voltage tolerance ±20V for drive flexibility
• Operating range from -55 to 150 °C for wide‑temperature deployment
Applications
• Suitable for synchronous buck converters in compact supplies
• Ideal for battery management and power‑distribution stages
• Used with motor drivers requiring high current switching
• Can be used for load switches in telecommunications equipment
• Useful in LED drivers where low Rds(on) reduces heat
• Ideal for battery management and power‑distribution stages
• Used with motor drivers requiring high current switching
• Can be used for load switches in telecommunications equipment
• Useful in LED drivers where low Rds(on) reduces heat
What package type should I expect for footprint planning?
The device is supplied in a PowerPAK 1212‑8 surface‑mount package measuring 3.61 x 3.61mm, allowing high‑density PCB layouts and efficient thermal contact to copper planes.
How does the device behave thermally under load?
At its maximum power dissipation of 15.6W the device requires appropriate PCB thermal design since junction‑to‑ambient heat must be managed to stay within the 150 °C maximum operating temperature.
What switching characteristics affect driver selection?
With a typical gate charge of 3.8 nC the gate drive must supply short current pulses during transitions
this lowers switching losses but requires consideration of driver peak current and gate resistance.
Are there limits on reverse conduction for use in synchronous circuits?
The forward voltage is specified as 1.2V so body‑diode conduction and recovery behaviour should be evaluated in synchronous‑rectification topologies to assess losses during reverse current events.
Related links
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