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    Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS966ENW-T1_GE3

    RS Stock No.:
    178-3851P
    Mfr. Part No.:
    SQS966ENW-T1_GE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
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    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$9.089

    unitsPer unit
    750 - 1475HK$9.089
    1500 +HK$8.949
    Packaging Options:
    RS Stock No.:
    178-3851P
    Mfr. Part No.:
    SQS966ENW-T1_GE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product overview and Technical data sheets


    Legislation and Compliance

    RoHS Status: Not Applicable

    COO (Country of Origin):
    CN

    Product Details

    TrenchFET® power MOSFET


    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current6 A
    Maximum Drain Source Voltage60 V
    Package TypePowerPAK 1212-8
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance60 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2.5V
    Minimum Gate Threshold Voltage1.5V
    Maximum Power Dissipation27.8 W
    Maximum Gate Source Voltage±20 V
    Number of Elements per Chip2
    Maximum Operating Temperature+175 °C
    Transistor MaterialSi
    Width3.15mm
    Typical Gate Charge @ Vgs6.2 nC @ 10 V
    Length3.15mm
    SeriesTrenchFET
    Forward Diode Voltage1.1V
    Automotive StandardAEC-Q101
    Minimum Operating Temperature-55 °C
    Height1.07mm
    Available for back order.
    Add to Basket
    units

    This product is currently unavailable to backorder.

    Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

    Added

    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    HK$9.089

    unitsPer unit
    750 - 1475HK$9.089
    1500 +HK$8.949
    Packaging Options: