Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SQS966ENW-T1_GE3
- RS Stock No.:
- 178-3727
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
On back order for despatch 04/03/2025, delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$3.397
| Units | Per unit | Per Reel* |
| 3000 - 12000 | HK$3.397 | HK$10,191.00 |
| 15000 + | HK$3.329 | HK$9,987.00 |
| *price indicative | ||
- RS Stock No.:
- 178-3727
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 60 V |
| Series | TrenchFET |
| Package Type | PowerPAK 1212-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 60 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 27.8 W |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
| Length | 3.15mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 2 |
| Width | 3.15mm |
| Height | 1.07mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.1V |
| Automotive Standard | AEC-Q101 |