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    Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ348DT-T1-GE3

    RS Stock No.:
    178-3702
    Mfr. Part No.:
    SiZ348DT-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Vishay Siliconix
    View all MOSFETs
    3000 In stock for delivery within 3 working days
    Add to Basket
    units

    Added

    Price Each (On a Reel of 3000)

    HK$6.719

    unitsPer unitPer Reel*
    3000 - 3000HK$6.719HK$20,157.00
    6000 - 9000HK$6.517HK$19,551.00
    12000 +HK$6.322HK$18,966.00
    *price indicative
    RS Stock No.:
    178-3702
    Mfr. Part No.:
    SiZ348DT-T1-GE3
    Manufacturer:
    Vishay Siliconix

    RoHS Status: Not Applicable

    Product overview and Technical data sheets


    Legislation and Compliance

    RoHS Status: Not Applicable


    Product Details

    TrenchFET® Gen IV power MOSFET
    High side and low side MOSFETs form optimized combination for 50 % duty cycle
    Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching


    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current30 A
    Maximum Drain Source Voltage30 V
    Package TypePowerPAIR 3 x 3
    Mounting TypeSurface Mount
    Pin Count8
    Maximum Drain Source Resistance10 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1V
    Minimum Gate Threshold Voltage2.4V
    Maximum Power Dissipation16.7 W
    Maximum Gate Source Voltage-16 V, +20 V
    Length3mm
    Typical Gate Charge @ Vgs12.1 nC @ 10 V
    Transistor MaterialSi
    Maximum Operating Temperature+150 °C
    Number of Elements per Chip2
    Width3mm
    Height0.75mm
    Forward Diode Voltage1.2V
    Minimum Operating Temperature-55 °C
    SeriesTrenchFET
    3000 In stock for delivery within 3 working days
    Add to Basket
    units

    Added

    Price Each (On a Reel of 3000)

    HK$6.719

    unitsPer unitPer Reel*
    3000 - 3000HK$6.719HK$20,157.00
    6000 - 9000HK$6.517HK$19,551.00
    12000 +HK$6.322HK$18,966.00
    *price indicative