Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
- RS Stock No.:
- 178-3702
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$13,266.00
FREE delivery for orders over HK$250.00
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$4.422 | HK$13,266.00 |
| 6000 - 9000 | HK$4.333 | HK$12,999.00 |
| 12000 + | HK$4.247 | HK$12,741.00 |
*price indicative
- RS Stock No.:
- 178-3702
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 16.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 3 mm | |
| Height | 0.75mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 16.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 3 mm | ||
Height 0.75mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
RoHS Status: Exempt
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
Related links
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAIR 3 x 3FDC