Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 32.5 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3

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HK$84.20

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Per unit
Per Pack*
10 - 40HK$8.42HK$84.20
50 - 90HK$8.26HK$82.60
100 - 240HK$8.12HK$81.20
250 - 990HK$7.97HK$79.70
1000 +HK$7.83HK$78.30

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Packaging Options:
RS Stock No.:
228-2935
Mfr. Part No.:
SiZ254DT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32.5A

Maximum Drain Source Voltage Vds

70V

Package Type

PowerPAIR 3 x 3S

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0161Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

33W

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 70 V (D-S) MOSFET.

100 % Rg and UIS tested

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