Infineon HEXFET N-Channel MOSFET, 85 A, 150 V Enhancement, 3-Pin TO-220 IRFB4321PBF
- RS Stock No.:
- 178-1416
- Mfr. Part No.:
- IRFB4321PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 50 units)*
HK$1,208.70
FREE delivery for orders over HK$250.00
- 950 unit(s) ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$24.174 | HK$1,208.70 |
| 100 - 150 | HK$23.646 | HK$1,182.30 |
| 200 + | HK$23.124 | HK$1,156.20 |
*price indicative
- RS Stock No.:
- 178-1416
- Mfr. Part No.:
- IRFB4321PBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Power Dissipation Pd | 350W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Width | 4.82mm | |
| Height | 9.02mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Power Dissipation Pd 350W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Width 4.82mm | ||
Height 9.02mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 85A Maximum Continuous Drain Current - IRFB4321PBF
Features and Benefits:
• 15mΩ Rds(on) minimises conduction losses
• 71 nC typical gate charge supports Rapid switching control
• 30V maximum gate-source voltage allows robust gate drive
• -55°C to 175°C operating range sustains harsh environments
Applications
• Ideal for motor‑drive switching elements
• Used with heatsinked regulators in industrial systems
• Can be used for DC-DC converter switching
• Suitable for through‑hole replacement in legacy boards
What mounting method does it use?
What kind of channel and switching mode does it use?
What are the limits for gate and drain voltages?
How much continuous current can it handle and what is the thermal capacity?
Are there environmental or approval considerations for use?
Related links
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
