Vishay Single IRLD 1 Type N, Type N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRLD110PBF

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Subtotal (1 tube of 100 units)*

HK$868.90

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Units
Per unit
Per Tube*
100 - 100HK$8.689HK$868.90
200 - 300HK$8.501HK$850.10
400 +HK$8.311HK$831.10

*price indicative

RS Stock No.:
178-0913
Mfr. Part No.:
IRLD110PBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

100V

Package Type

HVMDIP

Series

IRLD

Mount Type

Through Hole, Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

540mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Forward Voltage Vf

2.5V

Maximum Power Dissipation Pd

1.3W

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Length

5mm

Standards/Approvals

No

Height

3.37mm

Width

6.29 mm

Number of Elements per Chip

1

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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