Vishay IRFP450A Type N-Channel MOSFET, 14 A, 500 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 178-0801
- Mfr. Part No.:
- IRFP450APBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 25 units)*
HK$498.90
FREE delivery for orders over HK$250.00
In Stock
- Plus 225 unit(s) shipping from 26 January 2026
- Plus 100 unit(s) shipping from 02 February 2026
- Plus 500 unit(s) shipping from 05 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 100 | HK$19.956 | HK$498.90 |
| 125 + | HK$17.96 | HK$449.00 |
*price indicative
- RS Stock No.:
- 178-0801
- Mfr. Part No.:
- IRFP450APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRFP450A | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.31 mm | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRFP450A | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.31 mm | ||
Height 20.7mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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