Microchip TP2540 Type P-Channel MOSFET, 125 mA, 400 V Enhancement, 3-Pin TO-243 TP2540N8-G
- RS Stock No.:
- 177-9867
- Mfr. Part No.:
- TP2540N8-G
- Manufacturer:
- Microchip
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 495 | HK$15.16 | HK$75.80 |
| 500 - 995 | HK$14.78 | HK$73.90 |
| 1000 + | HK$14.56 | HK$72.80 |
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- RS Stock No.:
- 177-9867
- Mfr. Part No.:
- TP2540N8-G
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-243 | |
| Series | TP2540 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Width | 2.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-243 | ||
Series TP2540 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.8V | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Width 2.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (60pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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