onsemi NTTFS4C02N Type N-Channel MOSFET, 29 A, 30 V Enhancement, 8-Pin WDFN NTTFS4C02NTAG
- RS Stock No.:
- 171-8393
- Mfr. Part No.:
- NTTFS4C02NTAG
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$86.70
FREE delivery for orders over HK$250.00
Limited stock
- 200 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 350 | HK$3.468 | HK$86.70 |
| 375 - 725 | HK$3.38 | HK$84.50 |
| 750 + | HK$3.328 | HK$83.20 |
*price indicative
- RS Stock No.:
- 171-8393
- Mfr. Part No.:
- NTTFS4C02NTAG
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Series | NTTFS4C02N | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 4.2W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Height | 0.75mm | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Series NTTFS4C02N | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 4.2W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Height 0.75mm | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Power MOSFET 30V 170A 2.25 mOhm Single N−Channel μ8FL
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free
Applications
DCDC Converters
Power Load Switch
Notebook Battery Management
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