Toshiba Single 1 N-Channel MOSFET, 3.5 A, 100 V Enhancement, 3-Pin SOT-23 SSM3K361R
- RS Stock No.:
- 171-2477
- Mfr. Part No.:
- SSM3K361R
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
HK$80.00
FREE delivery for orders over HK$250.00
In Stock
- 150 unit(s) ready to ship from another location
- Plus 1,050 unit(s) shipping from 22 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | HK$3.20 | HK$80.00 |
| 100 - 475 | HK$3.12 | HK$78.00 |
| 500 - 975 | HK$3.04 | HK$76.00 |
| 1000 + | HK$2.968 | HK$74.20 |
*price indicative
- RS Stock No.:
- 171-2477
- Mfr. Part No.:
- SSM3K361R
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 92mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Width | 1.8mm | |
| Height | 700μm | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 92mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 2.4W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Width 1.8mm | ||
Height 700μm | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TH
Power Management Switches
DC-DC Converters
175 MOSFET
4.5 V drive
Low drain-source on-resistance
RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V)
RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)
Related links
- Toshiba Single 1 Type N-Channel MOSFET EnhancementLF(B
- Toshiba Single 1 Type N-Channel MOSFET 3-Pin SOT-723 SSM3K37MFV
- Toshiba Single 1 Type N-Channel MOSFET 3-Pin SOT-723 SSM3K37MFV,L3F(B
- Toshiba Single 2SK 1 Type N-Channel MOSFET 800 V EnhancementS5Q(J
- Toshiba Single Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SSM3K333R
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Taiwan Semiconductor Single 1 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 TSM2302CX RFG
- DiodesZetex Single 1 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-23 ZXMN2A01E6TA