N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

RS Stock No.:: 168-8966
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tube of 30 units)**

HK$5,257.29

390 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Tube**
30 - 120	HK$175.243	HK$5,257.29
150 +	HK$171.737	HK$5,152.11

**price indicative

RS Stock No.:: 168-8966
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

SCT30N120, Silicon Carbide Power MOSFET 45A, 1200V, 90mOhm N-Channel in HiP247
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	1200 V
Package Type	HiP247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	270 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Length	15.75mm
Typical Gate Charge @ Vgs	105 nC @ 20 V
Maximum Operating Temperature	+200 °C
Number of Elements per Chip	1
Width	5.15mm
Transistor Material	Si
Forward Diode Voltage	3.5V
Minimum Operating Temperature	-55 °C
Height	20.15mm

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

FREE delivery for orders over HK$850.00

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.