Toshiba TK Type N-Channel MOSFET, 214 A, 80 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 168-7773
- Mfr. Part No.:
- TK100E08N1
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
HK$1,096.40
FREE delivery for orders over HK$250.00
In Stock
- Plus 600 unit(s) shipping from 26 January 2026
- Plus 2,150 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$21.928 | HK$1,096.40 |
| 100 - 150 | HK$21.27 | HK$1,063.50 |
| 200 + | HK$20.632 | HK$1,031.60 |
*price indicative
- RS Stock No.:
- 168-7773
- Mfr. Part No.:
- TK100E08N1
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 255W | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.45 mm | |
| Length | 10.16mm | |
| Height | 15.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 255W | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.45 mm | ||
Length 10.16mm | ||
Height 15.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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