STMicroelectronics MDmesh Type N-Channel MDmesh II Power MOSFET, 17 A, 500 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 168-7555
- Mfr. Part No.:
- STB23NM50N
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 1000 units)*
HK$17,613.00
FREE delivery for orders over HK$250.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | HK$17.613 | HK$17,613.00 |
| 2000 - 9000 | HK$17.085 | HK$17,085.00 |
| 10000 + | HK$15.376 | HK$15,376.00 |
*price indicative
- RS Stock No.:
- 168-7555
- Mfr. Part No.:
- STB23NM50N
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MDmesh II Power MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Series | MDmesh | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.75mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MDmesh II Power MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Series MDmesh | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.75mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MDmesh II Power MOSFET 500 V Enhancement, 3-Pin TO-263 STB23NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 STB18NM80
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB24NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STF24NM60N