STMicroelectronics Type N-Channel MOSFET, 6.2 A, 800 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 168-7520
- Mfr. Part No.:
- STP8NK80ZFP
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
HK$609.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 19 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$12.18 | HK$609.00 |
| 100 - 150 | HK$11.914 | HK$595.70 |
| 200 + | HK$11.65 | HK$582.50 |
*price indicative
- RS Stock No.:
- 168-7520
- Mfr. Part No.:
- STP8NK80ZFP
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 16.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP8NK80ZFP
- Vishay IRFBC Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IRFBC40PBF
- Vishay IRFBC Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220