IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3
- RS Stock No.:
- 168-4696
- Mfr. Part No.:
- IXFB82N60Q3
- Manufacturer:
- IXYS
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View bulk pricing optionsSubtotal (1 tube of 25 units)*
HK$6,797.30
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- Shipping from 08 July 2027
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 100 | HK$271.892 | HK$6,797.30 |
| 125 + | HK$263.74 | HK$6,593.50 |
*price indicative
- RS Stock No.:
- 168-4696
- Mfr. Part No.:
- IXFB82N60Q3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PLUS264 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.56kW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -30, +30V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31mm | |
| Length | 20.29mm | |
| Height | 26.59mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PLUS264 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.56kW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -30, +30V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 5.31mm | ||
Length 20.29mm | ||
Height 26.59mm | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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